http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02284627-A

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filingDate 1989-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b2b011e7b119e12cd7bf87a01753733
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publicationDate 1990-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H02284627-A
titleOfInvention Dry etching device
abstract PURPOSE: To inhibit a foreign matter from being stuck on the surface of a wafer by providing a closed vessel with a sintered metallic porous body housed therein to a route for supplying chloride-based etching gas and hydrolyzing moisture and gas contained in the above-mentioned gas and trapping the reacted product by a filter. n CONSTITUTION: A closed vessel 14 with the sintered aluminum porous bodies 14A, 14B housed therein is provided to the routes 13, 17 for supplying chlorine- based etching gas (e.g. CCl 4 ) which are connected to a reaction vessel 1 provided with the electrodes 3, 4 for generating plasma. Moisture and gas contained in the above-mentioned gas is hydrolyzed and allowed to react with each other. Hydrogen chloride produced by this hydrolyzing reaction is allowed to react with the sintered metal and the produced chloride is trapped by a filter 15. As a result, generation of chloride is inhibited and a foreign matter is inhibited from being stuck on the surface of a wafer 5. Furthermore sticking of the foreign matter on the surface of the constitutional member of the reaction chamber is reduced and abnormal discharge is eliminated. n COPYRIGHT: (C)1990,JPO&Japio
priorityDate 1989-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 27.