| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0755 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-022 |
| filingDate |
1989-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1280ce817e240bf128d0402e31feeff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63b5e874e8422babd1e8759c50625d07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_010856f9ce777c7353ebbe7a58e2c7ef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c88d67eac38e31eff972c4bdf7115947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48b682954d4f133628e942c545ef370b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_375faf58f7ec6a8b3255af50c2df4cf7 |
| publicationDate |
1990-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H02230249-A |
| titleOfInvention |
Positive photoresist |
| abstract |
PURPOSE: To form an image withstanding reactive ion etching with oxygen plasma and having high resolution by using a positive photoresist contg. an organosilicon compd. having quinonediazo groups as terminal groups and a phenolic novolak polymer in a specified ratio. n CONSTITUTION: This photoresist contains an organosilicon compd. having quinonediazo groups as terminal groups and a phenolic novolak polymer. The amt. of the organosilicon compd. is about 5-50wt.%, preferably about 10-30wt.% of the total amt. of the organosilicon compd. and the phenolic novolak polymer. An image withstanding dry processing, especially reactive ion etching in oxygen plasma and having high resolution can be formed. n COPYRIGHT: (C)1990,JPO |
| priorityDate |
1988-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |