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filingDate 1988-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_582ec3dbbacc4bac8aa90adf30a95ef3
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publicationDate 1989-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-H01222254-A
titleOfInvention Photoresist composition
abstract PURPOSE:To obtain the title composition which has a high accuracy and reproducibility and a high oxygen plasma durability by incorporating a photosensitive siloxane polymer obtd. by condensing a quinone diazide compd. with a hydroxyl group contd. in a specified alkali soluble siloxane polymer, in the composition. CONSTITUTION:The photosensitive siloxane polymer obtd. by condensing the quinone diazide compd. with the hydroxyl group contd. in the alkali soluble siloxane polymer contg. at least one of repeating units shows by formulas I and II, is incorporated in the photoresist composition. In formulas I and II, X is a group shown by formula III or IV, etc., R1-R5 are each hydrogen atom. or optionally substd. alkyl group, etc., (l), (m), (n) and (p) are each 0 or a positive integer. And, in formulas III and IV, R is a hydrocarbon group or a substd. hydrocarbon group. And, as the siloxane polymer contg. formulas I and/or II, has a polysiloxane structure as the main chain of a polymer, a fine pattern which has a very high durability against an oxygen plasma radiation reactive etching (RIE) and a high aspect ratio is formed advantageously. Thus, the composition can be formed as a positive type photoresist which has a high sensitivity against UV rays.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007293160-A
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Total number of triples: 37.