http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02222537-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D3-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D7-24 |
| filingDate | 1989-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a5e6e2403b4ecd466903f09ac97e423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4e4a0429466df1e0e488f2176cab62d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4330bb3b6975bcedf49425ef0d8ff32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d16a51e7ae8ecda1ae7b8de343e691ba |
| publicationDate | 1990-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H02222537-A |
| titleOfInvention | Method of transferring pattern on silicone ladder resin and etching liquid to be used therefor |
| abstract | PURPOSE: To obtain a wet etching method, which can be applied even to a thick film in a short time and in which a stable transfer of a pattern is possible, by a method wherein after a specified silicone ladder resin is applied and dried on a substrate, a cresol novolak P-type resist is applied to form a pattern, then, after a treatment is performed, the resin is etched. n CONSTITUTION: A silicone ladder resin, which is represented by a general formula (I) (in the formula, R 1 is a phenyl radical or a lower alkyl group, two pieces of the R 1 s can be similar or dissimilar, R 2 is an hydrogen atom or a lower alkyl group, four pieces of the R 2 s can be similar or dissimilar and (n) shows an integer of 5 to 1000.), is applied and dried on a substrate and thereafter, a cresol novolak P-type resist is applied and a prescribed pattern is formed on the resist. Then, after a treatment is performed prior to an etching, the silicone ladder resin is etched. For example, as a pretreatment for the above etching, the silicone ladder resin is heated for 15 to 60 minutes at 125 to 160°C and, thereafter, is held for 3 hours or longer at a room temperature. Moreover, an aromatic solvent is used as an etching liquid in the above etching. n COPYRIGHT: (C)1990,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6703132-B1 |
| priorityDate | 1989-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.