http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02112958-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41J2-335 |
| filingDate | 1988-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_201ce1715c836d4120473710d1ca062e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_036ef80d7cb629b1afc8eeb8393c7934 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82584d8da0e977fa45f72fbba00ed6d7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eacbf00077c74f41ee80c17fa79a7101 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cde41742c3c087e126fe5f798f810f7a |
| publicationDate | 1990-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H02112958-A |
| titleOfInvention | Thin film type thermal head and manufacture thereof |
| abstract | PURPOSE: To easily obtain a thin film type thermal head having high reliability by forming a two layer structure of a lower layer made of silicon, oxide, nitrogen and an upper layer made of silicon, oxygen, nitrogen and carbon in such a manner that both the layers are formed by a plasma CVD method. n CONSTITUTION: After a heat generating resistor 2, a conductor layer 3 are formed on an insulating substrate 1, a wear resistant protective layer (made of a 2-layer structure of a lower layer 4 made of silicon, oxygen and nitrogen and an upper layer 5 made of silicon, oxygen, nitrogen and carbon by a plasma CVD method. Regarding heat resistance, hydrogen concentration in the film is increased from the layer 4 the layer 5 so that the heat resistance decreases to the layer 5, but since the surface temperature of the upper layer of the protective film is considerably lower than that of a heat generating resistor, there is no practical problem. On the other hand, as to high hardness, since the layer 5 increases, as apparent, a bond which contributes to the high hardness such as Si-C, Si-N, etc., its substantial hardness is increased to provide a thin film type thermal head having high reliability. n COPYRIGHT: (C)1990,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0838341-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6091437-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0838341-A2 |
| priorityDate | 1988-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.