http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01276725-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 1989-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40ea48f119c9d0534472bc496bea08f9 |
| publicationDate | 1989-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-H01276725-A |
| titleOfInvention | Method of forming groove in silicon substrate for super-high-density integrated semiconductor circuit |
| abstract | PURPOSE: To make a groove having a smooth wall surface and a round bottom surface in a silicon substrate with high reproductivity by a reactive ion etching method of using a mask in an etching atmosphere containing trifluorobromomethane. n CONSTITUTION: For an etching mask 2 in the case of making a groove 3 in a silicon substrate 1, an SiO 2 film which is made by the thermal decomposition of tetraethylorthosilicate is used. Reactive ion etching is performed by a three- pole type plane plate reactor. In the reactor, an etching mixed gas comprising trifuorobromomethane and nitrogen is used. In that case, the harmonics of two different frequencies are simultaneously applied for the generation and acceleration of reactive ions. Therefore, a groove having a slightly tilted smooth wall surface and a round bottom surface is made with good reproductivity. A large-capacitance groove capacitor is obtained therefrom. n COPYRIGHT: (C)1989,JPO |
| priorityDate | 1988-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.