http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4763236-B2
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 |
| filingDate | 2002-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-4763236-B2 |
| titleOfInvention | Method for etching a pattern in an etching body using plasma |
| abstract | The invention relates to a method for etching structures in an etching body (19), especially recesses in a silicon body which are laterally and precisely defined by an etching mask, by means of a plasma (15). According to said method, a high-frequency pulsed, low-frequency modulated high frequency power is injected into the etching body (19), at least temporarily, by means of a high-frequency alternating voltage, and the intensity of the plasma (15) is modulated as a function of time. |
| priorityDate | 2001-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 |
Total number of triples: 19.