| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-1825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-186 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F04D19-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F04D19-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| filingDate |
2019-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2022-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2022501829-A |
| titleOfInvention |
Protecting the vacuum pump from the accumulation of sedimentary by-products |
| abstract |
A processing chamber such as a plasma etching chamber is capable of performing deposition and etching operations, and by-products of the deposition and etching operations accumulate in a vacuum pump system fluidly coupled to the processing chamber. there is a possibility. The vacuum pump system can have multiple roughing pumps, whereby the etching gas can be diverted to the roughing pump and the deposition precursor can be diverted to another roughing pump. A detour line can send unused sedimentary precursors to a separate roughing pump. The formation of sedimentary by-products can be prevented by incorporating one or more gas ejectors or venturi pumps at the outlet of the primary pump in the vacuum pump system. Cleaning operations, such as waferless automatic cleaning operations using certain clean chemicals, can remove deposited by-products before or after the etching operation. [Selection diagram] Fig. 2A |
| priorityDate |
2018-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |