| abstract |
A semiconductor device capable of suppressing warping and breaking of a semiconductor element is provided. According to one embodiment, a semiconductor device includes a first transistor, a second transistor, a third electrode, and a control layer. The first transistor has a first region of a semiconductor layer having a first side and a second side, a first electrode, and a first gate electrode. The first electrode is electrically connected to the second surface of the first region. A first gate electrode is provided in the first region. The second transistor has a second region of the semiconductor layer provided adjacent to the first region, a second gate electrode, and a second electrode. A second gate electrode is provided in the second region. The second electrode is electrically connected to the second surface of the second region. A third electrode is provided on the first surface side and electrically connected to the first transistor and the second transistor. The control layer is provided such that the third electrode is positioned between the control layer and the first surface, and has a coefficient of linear expansion smaller than that of the third electrode. [Selection drawing] Fig. 1 |