http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2022094914-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11582 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2021-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_824a3afb02e8a9b202f0411a6f57ca45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86c27ea9e42129dff901eb344a6b5f0e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6649b81c3b891d150780c9651224fba5 |
| publicationDate | 2022-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2022094914-A |
| titleOfInvention | Etching method and etching equipment |
| abstract | PROBLEM TO BE SOLVED: To provide an etching method and an etching apparatus capable of etching Si or SiN with good surface roughness. SOLUTION: The etching method for etching Si or SiN existing on a substrate is to perform radical oxidation treatment on a substrate having Si or SiN to form an oxide film on the surface of Si or SiN, and to form an oxide film on the oxide film. On the other hand, it has the chemical treatment with gas and the removal of the reaction product produced by the chemical treatment, the formation of an oxide film, the chemical treatment, and the reaction product. Repeat multiple times to remove. [Selection diagram] Fig. 1 |
| priorityDate | 2020-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.