| abstract |
PROBLEM TO BE SOLVED: To provide a plasma etching apparatus for etching a semiconductor substrate. A plasma etching apparatus (600) is a plasma chamber, a plasma generator for maintaining plasma in the plasma chamber, and a substrate support arranged in the plasma chamber to support a semiconductor substrate. It includes a substrate support including a conductive structure, a power source for supplying an RF electric signal having RF power to the conductive structure, and an annular dielectric ring structure including a back surface, and the back surface is conductive. The conductive structure, including the coating, extends beneath the conductive coating away from the conductive coating so that when RF power is applied to the conductive structure, the RF power is coupled to the conductive coating. It has become. [Selection diagram] FIG. 6A |