| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c864c342d3ba8ae8a6d099f2285038a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2021-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55209d28eea6e75dc71c27ef5f60f322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6c6f2bd058e5248ccdcfe8d0d20b776
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6af5b7bee4b7a2dc2e2ab182f2f0917e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_651f5d855df296525d59bd53f91839a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e452dd27f71001b49d1530f8a5e4bef3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0de2e57baff04d2fb2ad2f8df4251c60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30d8108ac4917b7e88891e7566a403be
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0348c97cb1a3af06eccc664e12dfa90
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61fdd08b1d2d7c73ed705237a9b469e0 |
| publicationDate |
2022-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2022019641-A |
| titleOfInvention |
Spacer structure of semiconductor device and its formation method |
| abstract |
PROBLEM TO BE SOLVED: To provide a semiconductor structure having a fin structure on a substrate and a method for forming the same. A method for manufacturing a semiconductor device having a fin structure including a first channel layer and a sacrificial layer, wherein a first recessed structure is formed in a first portion of the fin structure, and a second fin structure is formed. A second recessed structure is formed in the sacrificial layer of the portion, a dielectric layer is formed in the first recessed structure and the second recessed structure, and the dielectric layer is etched to channel the second portion of the fin structure. An oxygen-free periodic etching process is performed to expose the layer. The oxygen-free periodic etching process is performed by performing a first etching process in which the dielectric layer on the channel layer of the second portion of the fin structure is selectively etched by the first etching selection ratio, and the fin structure is subjected to the first etching process. It comprises performing a second etching process of selectively etching the dielectric layer on the channel layer of the second portion with a second etching selectivity greater than the first etching selectivity. [Selection diagram] Fig. 3 |
| priorityDate |
2020-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |