| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c864c342d3ba8ae8a6d099f2285038a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-2007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3343 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32642 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2021-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86f3d025ed1dd69ca5ebab0983c63ef7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90c099c387c4274eff971f23044f4343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4337000eb0ff6cdc02a9734cb4c7331e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ec5a162eeb972523875685cc98fcc99
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecc8f7bfa19e85aca9f1bd58a1e39538
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bbce1d262c0e3c1f22e6dd2bbb8470d |
| publicationDate |
2022-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2022016373-A |
| titleOfInvention |
Edge ring for plasma etchers with chamfered outline and impedance design |
| abstract |
PROBLEM TO BE SOLVED: To provide an edge ring, a method and a plasma etcher capable of operating a plasma etcher for a long time, improving a manufacturing throughput, and reducing a replacement cost related to the operation of the plasma etcher. An edge ring 125 for a plasma etcher 105 has a circular bottom having a sized opening for receiving an electrostatic chuck 120 supporting a semiconductor device 110 and a first top of the circular bottom. It includes an integrally connected circular top and a circular chamfer that is integrally connected to a second top of the circular bottom and integrally connected to one side of the circular top. The circular chamfer includes an inner surface angled radially outward from the opening by less than 90 degrees. [Selection diagram] Fig. 1A |
| priorityDate |
2020-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |