http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021514543-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H2245-42 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-2406 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32366 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32541 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-24 |
| filingDate | 2019-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2021514543-A |
| titleOfInvention | A method of controlling the etching profile of a punctate etching module and a punctate etching module using an annular creepage discharge plasma device. |
| abstract | A punctate etching module using an annular creepage discharge plasma apparatus is disclosed. The point-like etching module using the annular creeping discharge plasma device is arranged with a plate-shaped dielectric, a circular electrode arranged in surface contact with the upper surface of the dielectric, and surface contact with the lower surface of the dielectric. An annular electrode that provides a gas accommodating space for accommodating a gas, and a power supply unit that applies a high voltage between the circular electrode and the annular electrode are included, and when a high voltage is applied and discharge is started. , The filamentous plasma is irradiated from the plasma developed in the central direction of the annular electrode between the inner side surface of the annular electrode and the lower surface of the dielectric in the direction of the substrate to be processed. |
| priorityDate | 2018-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.