| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F7-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 |
| filingDate |
2019-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2021509765-A |
| titleOfInvention |
A silicon precursor and a method for producing a silicon-containing thin film using the silicon precursor. |
| abstract |
The present invention relates to a vapor deposition compound capable of thin film deposition by vapor deposition, and is specifically applied to an atomic layer deposition (ALD) or a chemical vapor deposition (CVD). The present invention relates to a silicon precursor capable of high-temperature vapor deposition and a method for producing a silicon-containing thin film using the same. |
| priorityDate |
2018-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |