| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_98a75c9fff239084cf3c988c59841957 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B51-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B51-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-30 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45512
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02148 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2021-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_435e7b44545b8d177176fea7bb4b6b25
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01a38b61d46964b33cfeb7918af223c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcdefc0a07005ec4a18d33f4b026e365
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_188defd48490e70eee1f39ee7ae27955 |
| publicationDate |
2021-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2021182632-A |
| titleOfInvention |
A novel formulation for the deposition of silicon-doped hafnium oxide as a ferroelectric material |
| abstract |
PROBLEM TO BE SOLVED: To deposit both a silicon-containing fragment and a hafnium-containing fragment on a surface having a hydroxyl group to deposit a silicon-doped hafnium having a silicon doping amount in the range of 0.5 to 8 mol%. Providing formulations or compositions comprising both organic aminohafnium and organic aminosilane precursor compounds solves the problems associated with conventional precursors and methods. In one aspect, the invention implants both a silicon-containing fragment and a hafnium-containing fragment on a given surface having a hydroxyl group, making it suitable for ferroelectric materials 0.5-8. A formulation comprising both organic aminohafnium and an organic aminosilane precursor compound that deposits silicon-doped hafnium oxide with a mol% silicon doping amount. In another aspect, the invention is a method and apparatus for depositing a silicon-doped hafnium oxide film as a ferroelectric material using the formulation. [Selection diagram] Fig. 2 |
| priorityDate |
2017-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |