http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021090040-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
filingDate 2020-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_701bff7265fdc643b3c655caade1f301
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b5decb61eb61a3ad4e6238050a2fe1a
publicationDate 2021-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2021090040-A
titleOfInvention Etching liquid, manufacturing method of etching liquid, treatment method of object to be treated, and manufacturing method of ruthenium-containing wiring
abstract PROBLEM TO BE SOLVED: To provide an etching solution which is practical for a ruthenium etching step and has a reduced risk of ruthenium tetroxide generation, a method for producing the etching solution, a method for treating an object to be treated using the etching solution, and a ruthenium-containing wiring. Provide a manufacturing method. An etching solution containing orthoperiodic acid and ammonia and having a pH of 8 or more and 10 or less for etching ruthenium. Further, a method for producing the etching solution. A method for treating an object to be processed, which comprises a step of etching an object to be processed containing ruthenium using the etching solution. In addition, the step of selectively etching the region composed of ruthenium by applying the etching solution to the substrate including the region composed of the insulating film and the region composed of ruthenium on the surface layer is included. , A method for manufacturing ruthenium-containing wiring. [Selection diagram] None
priorityDate 2019-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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