| abstract |
PROBLEM TO BE SOLVED: To provide an etching method and an etching apparatus capable of improving a mask shape. An etching method for etching a film with plasma includes a step of preparing a substrate, an etching step, and a correction step. The step of preparing the substrate prepares a substrate having a mask formed on the first film. In the etching step, the first film is etched with the plasma of the first gas containing Xe, Kr or Rn so that the aspect ratio of the holes or grooves formed in the first film is 30 or more. In the correction step, the shape of the mask is corrected by the plasma of the second gas. [Selection diagram] Fig. 3 |