http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020502790-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02175 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32889 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45561 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32899 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2017-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2020502790-A |
| titleOfInvention | Semiconductor processing equipment |
| abstract | An apparatus and method for forming a structure in a semiconductor processing apparatus is disclosed. The apparatus includes a first reaction chamber, the first reaction chamber configured to hold at least one substrate having a first layer. The apparatus also includes a precursor delivery system configured to effect permeation by continuously pulsing the first precursor and the second precursor on the substrate. The apparatus can also include a first removal system configured to remove at least a portion of the first layer disposed on the substrate while leaving the infiltrated material; Is removed in the same semiconductor processing apparatus. A method for forming a structure in a semiconductor processing apparatus is also disclosed. The method provides a substrate for processing in a reaction chamber, the substrate having a first layer disposed on the substrate. The method also includes performing permeation of the first layer by continuously pulsing the first precursor and the second precursor on the substrate, wherein the first precursor and the second precursor From the reaction, the infiltrated material forms in the first layer. The method also includes removing at least a portion of the first layer disposed on the substrate after performing the infiltration, wherein the infiltration and removal of at least a portion of the first layer are performed in the same semiconductor processing apparatus. Do. [Selection diagram] Fig. 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022196259-A1 |
| priorityDate | 2016-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 74.