| abstract |
The present invention discloses a bulk copper CMP polishing formulation developed to meet the challenging requirements of high Cu removal rates for advanced technology node Cu CMP applications. Chemical mechanical flattening (CMP) compositions are provided that provide very high and adjustable Cu removal rates for a wide range of bulk or advanced node copper or thru silica vias (TSVs). The CMP composition provides high selectivity of Cu film vs. other barrier layers such as Ta, TaN, Ti and TiN and dielectric films such as TEOS, low-k and ultra-low-k films. The CMP polishing composition comprises a chelating agent selected from the group consisting of a solvent, an abrasive, an oxidizing agent, at least two amino acids, an amino acid derivative, an organic amine and a combination thereof, wherein at least one chelating agent is an amino acid. Or it is an amino acid derivative. Organic quaternary ammonium salts, corrosion inhibitors, pH regulators and biocides can be used in the composition. [Selection diagram] None |