| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32697
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32798
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-503 |
| filingDate |
2019-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_272a62a412b10e6da6edc363bbd13b5a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac3e98539a33f08c4f7a03a128f35da2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf014b8845cbb7480df904347f952588
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf2add2e363a990aae249c916e092aa3 |
| publicationDate |
2020-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2020119982-A |
| titleOfInvention |
Plasma processing apparatus and plasma processing method |
| abstract |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus configured to apply a negative DC voltage to an upper electrode and capable of suppressing process fluctuations. The plasma processing apparatus includes a chamber, a substrate support, an upper electrode, a high frequency power supply, and a DC power supply. The substrate support includes a lower electrode. The lower electrode is provided in the chamber. The upper electrode is provided above the substrate support. The high frequency power supply generates plasma in the chamber. The DC power supply device is electrically connected to the upper electrode. The DC power supply device is configured to periodically generate a pulsed DC voltage having a negative polarity. The output voltage of the DC power supply device is alternately switched between a negative DC voltage and zero volt. [Selection diagram] Figure 1 |
| priorityDate |
2019-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |