| abstract |
A method for preparing a protective coating for a semiconductor processing chamber component using atomic layer deposition (ALD), a multi-component protective coating, and a semiconductor processing chamber component coated with the multi-component protective coating. A multi-component coating composition for the surface of a semiconductor processing chamber component, comprising at least one of yttrium oxide or yttrium fluoride coated on the surface of the semiconductor processing chamber component using an atomic layer deposition process. A multi-component comprising a first film layer and at least one second film layer of an additional oxide or an additional fluoride coated on a surface of a semiconductor processing chamber component using an atomic layer deposition process. the coating composition, YO x F y, YAl x O y, YZr x O y, and YZr x Al y O z multicomponent coating composition selected from the group consisting of. [Selection diagram] Figure 1 |