| abstract |
PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device. A wire bonding process is performed after a die bonding process to electrically connect a plurality of pad electrodes PD of a semiconductor chip CP and a plurality of leads LD via a plurality of copper wires. A plating layer PL is formed on the surface of the lead LD, and a copper wire is connected to the plating layer PL in the wire bonding process. The plating layer PL is a silver plating layer. After the die bonding step and before the wire bonding step, the oxygen plasma treatment OP is applied to the lead frame and the semiconductor chip CP, and then the treatment of reducing the surface of the plating layer PL is performed. [Selection diagram] Fig. 12 |