| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3341 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32587
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2020-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11897270b1340382d45cb72366fe97c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1cbc915edc506f8d44a0bc81ddceaaf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d234124be7e513dda348c4f8808368e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0060c77f6bc3033ea8ce667d9b08a80 |
| publicationDate |
2020-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2020074452-A |
| titleOfInvention |
Processing chamber for etching low K and other dielectric films |
| abstract |
Methods and processing chambers for etching low-k and other dielectric films. A method with an etching chamber having a plurality of chamber regions for alternating generation of different plasmas includes modifying a portion of a low-k dielectric layer by plasma treatment. The modified portion of the low k dielectric layer is selectively etched over the mask layer and the unmodified portion of the low k dielectric layer. A first charge coupled plasma source is provided to generate an ion flux on the workpiece in one mode of operation. A secondary plasma source is provided to provide the reactant species flux to the workpiece in another mode of operation without significant ion flux. The controller operates to cycle through the modes of operation repeatedly over time to remove the desired cumulative amount of dielectric material. [Selection diagram] Figure 2 |
| priorityDate |
2011-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |