| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fb272959740a2231f287ac6bf4d190a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-332 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45563
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32541
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-513 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2018-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a082f31529d309d680ed29c706948e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d80c6b3b9a917835063e14b7d4fd3346 |
| publicationDate |
2020-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2020043221-A |
| titleOfInvention |
Substrate processing apparatus, method of manufacturing semiconductor device, and electrode of substrate processing apparatus |
| abstract |
An object of the present invention is to provide a technique that enables uniform substrate processing while maintaining the ability to generate active species by a plasma electrode. A substrate processing apparatus includes a reaction tube that forms a processing chamber for processing a substrate, and an electrode fixing device that is installed outside the reaction tube and fixes electrodes 300-1 and 300-2 that form plasma in the processing chamber. It has a jig (quartz cover) 301 and a heating device 207 provided outside the electrode fixing jig 301 to heat the reaction tube 203. The electrodes include an electrode 300-1 to which an arbitrary potential is applied and an electrode 300-2 to which a reference potential is applied. The surface area of the electrode to which an arbitrary potential is applied is the surface area of the electrode to which the reference potential is applied. More than twice. [Selection diagram] FIG. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022201242-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022044966-A1 |
| priorityDate |
2018-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |