| abstract |
In a plasma ashing method for removing a boron-containing amorphous carbon film by plasma, a plasma processing method and a plasma ashing apparatus capable of simultaneously improving the removal rate of a boron-containing amorphous carbon film and suppressing side etching on a trench sidewall layer. I will provide a. The plasma processing method includes performing plasma etching using a mask having an amorphous carbon film containing boron, and then applying the amorphous carbon film to a silicon nitride film, a silicon oxide film, or a tungsten film using plasma. The plasma processing method for selectively removing includes a removing step of removing the amorphous carbon film using plasma generated by a mixed gas of O 2 gas and CH 3 F gas or CH 2 F 2 gas. [Selection diagram] FIG. |