| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bf334efdc57a817d413aef1d9f5e9d80 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68327
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-6834 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6836
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67132
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-301 |
| filingDate |
2018-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f081762e0f8fa67e15991ee2b15166e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3b7ca11ddb4bc7c193de447c458a6c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aaf3808e6e7bd380f787f26cd7d70f88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99e672fb9cfad0328101108333504df8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_282196d853fa445b753a0873b13394ff |
| publicationDate |
2020-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2020025004-A |
| titleOfInvention |
Wafer processing method |
| abstract |
When a wafer having a device layer is divided into chips, a reduction in bending strength of the chips due to laser beam irradiation is prevented, and device damage is prevented from occurring in plasma dicing. A step of forming a mask (J1) for forming a groove along a street (S) on a substrate (W1) from the back surface (Wb) side of a wafer (W) provided with a device layer (D1) on the wafer back surface (Wb); A step of forming a groove Me along the street S in the substrate W1 by performing plasma etching from the Wb side, and defining a chip region C surrounded by the groove Me; and, after the etching step, in water subjected to ultrasonic vibration. Submerging the wafer W to generate or break a crack in the device layer D1 along the outer peripheral edge of the chip region C; and attaching a tape T to the wafer surface Wa before performing the submerging step. A wafer processing method in which the device D is separated from the tape T after the submerging step. [Selection diagram] FIG. |
| priorityDate |
2018-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |