http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020017646-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2018-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9fa1306048b68dc48596935bed20899b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0af0669753fdfd0f250a80274462ac79 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64b5a3cacdc24f235affc1b9377a1378 |
| publicationDate | 2020-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2020017646-A |
| titleOfInvention | Etching method |
| abstract | The present invention suppresses deterioration of characteristics of a semiconductor layer due to a gas used for etching a wiring layer. An etching method includes a supply step, a first etching step, a stopping step, and a second etching step. In the supply step, in order to form a semiconductor element, a reducing gas and a chlorine-containing gas are supplied into a chamber in which a substrate to be processed having a structure in which a wiring layer containing Al is stacked over an oxide semiconductor is housed. You. In the first etching step, the wiring layer is etched by the plasma of the processing gas including the mixed gas including the reducing gas and the chlorine-containing gas supplied into the chamber. In the stopping step, the supply of the reducing gas into the chamber is stopped when the wiring layer is etched to a predetermined thickness in the first etching step. In the second etching step, the wiring layer is further etched by the plasma of the processing gas containing the chlorine-containing gas supplied into the chamber. [Selection diagram] FIG. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20230068304-A |
| priorityDate | 2018-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.