http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019530982-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02323 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2017-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2019530982-A |
| titleOfInvention | Selective lateral depression of SiN |
| abstract | An exemplary method for laterally etching silicon nitride can include flowing a fluorine-containing precursor and an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber. The method may include forming a plasma in the remote plasma region to produce a plasma emission of fluorine-containing precursor and oxygen-containing precursor. The method can also include flowing a plasma emission into the processing region of the semiconductor processing chamber. The substrate may be disposed in the processing region and may include a trench formed through a stacked layer including alternating layers of silicon nitride and silicon oxide. The method may also include laterally etching the silicon nitride layer from the sidewalls of the trench while substantially maintaining the silicon oxide layer. The layer of silicon nitride can be etched laterally by less than 10 nm from the trench sidewalls. [Selection] Figure 5 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11515179-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020167277-A |
| priorityDate | 2016-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.