| abstract |
A photo-acid generator used in a chemically amplified resist material that has a good balance between sensitivity and LWR and provides a rectangular pattern in photolithography using high-energy rays such as ArF excimer laser, EB, and EUV as exposure light. And a chemically amplified resist material containing the photoacid generator, and a pattern forming method using the resist material. A photoacid generator comprising a compound represented by the following formula (1a). [Selection diagram] None |