| abstract |
A plasma processing apparatus capable of realizing both a radical irradiation step and an ion irradiation step with a single apparatus and capable of controlling the ion irradiation energy from several tens of eV to several keV. A mechanism (125, 126, 131, 132) for generating inductively coupled plasma; The decompression chamber is divided into an upper region 106-1 and a lower region 106-2, and a perforated plate 116 for shielding ions, and an upper region 106-1 and a lower region 106- as plasma generation regions. And a switch 133 for switching between 2 and 2. [Selection] Figure 2 |