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filingDate 2019-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2019-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2019167288-A
titleOfInvention Composite sintered body, semiconductor manufacturing apparatus member, and method of manufacturing composite sintered body
abstract A high-density composite sintered body having high plasma corrosion resistance, high volume resistivity, and high thermal conductivity is provided. A composite sintered body includes AlN and MgAl 2 O 4 . The open porosity of the composite sintered body is less than 0.1%. The relative density of the composite sintered body is 99.5% or more. The total content of AlN and MgAl 2 O 4 in the composite sintered body is 95% by weight or more and 100% by weight or less. The content of MgAl 2 O 4 in the composite sintered body is 15% by weight or more and 70% by weight or less. Thereby, a high-density composite sintered body having high plasma corrosion resistance, high volume resistivity, and high thermal conductivity can be provided. [Selection] Figure 1
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