| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d79a3714d75520adeea100b7ed428a77 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 |
| filingDate |
2018-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d90cc5f6cfb1af4fd73a84db4d4f0b9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eece9c43f43d7886467d3896c3eefe2f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd01f8607484a960eacc23858903254c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73a958fce693f1b9c05cb86bf2790975
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a205c606b1e86f8511bc3c6b4150f969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a10a832b81eaec204e0b47e3f18881c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82ad6c9e6856235d1c71e779036c0b6a |
| publicationDate |
2019-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2019142733-A |
| titleOfInvention |
Method for predicting occurrence of stacking fault in epitaxial silicon wafer and method for manufacturing epitaxial silicon wafer |
| abstract |
A method for predicting the density or number of stacking faults in an epitaxial silicon wafer in which an epitaxial layer is formed on a phosphorus-doped ultra-low resistance silicon wafer is provided. The present invention relates to a residence time within a range of 570 ° C. ± 70 ° C. during cooling in a single crystal ingot, a resistivity or a phosphorus concentration of a phosphorus-doped ultra-low resistance silicon wafer, and a wafer input in pre-epi pre-annealing. The density or number of stacking faults occurring in the epitaxial layer is predicted based on the furnace temperature at the time and the growth temperature of the epitaxial layer. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20230124056-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021166897-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I753774-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115135817-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115135818-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115135818-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021166895-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021166896-A1 |
| priorityDate |
2018-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |