| abstract |
An epitaxial silicon wafer manufacturing method capable of manufacturing an epitaxial silicon wafer capable of reducing the generation of SF in the epitaxial film and making the resistivity uniform in the epitaxial film surface even when a silicon wafer having an extremely low resistivity is used. To provide. A backside oxide film forming step S6 for forming an oxide film on the backside of a silicon wafer, a backside oxide film removing step S7 for removing an oxide film existing on the outer periphery of the silicon wafer, and a backside oxide film removing step S7. An argon annealing step S8 in which heat treatment is performed at a temperature of 1200 ° C. to 1220 ° C. for 60 minutes to 120 minutes in an argon gas atmosphere, and an epitaxial film is formed on the surface of the silicon wafer after the argon annealing step S8. Epitaxial film forming steps S9 and S10 to be formed. [Selection] Figure 20 |