| abstract |
An object of the present invention is to selectively remove a plurality of metal oxide films. A method of selectively removing a plurality of types of metal oxide films in a plurality of recesses formed on a substrate in a processing container, wherein plasma generated by introducing BCl 3 gas or BCl 3 gas Exposing the plurality of metal oxide films, stopping introduction of the BCl 3 gas and performing purging, and exposing the plurality of metal oxide films to plasma generated by introducing an inert gas. Exposing the plurality of types of metal oxide films to the plasma at least generated from a single gas, including repeating the steps of: stopping the introduction of the inert gas and performing the purging a plurality of times; A removal method is provided, exposing the plurality of metal oxides to one or more different plasmas. [Selected figure] Figure 6 |