| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f4a8faea375370b67c9d71e67db32bcd |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-569
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B32-963 |
| filingDate |
2017-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a80d88a18f9e87c9e8a6bcf52e2e259
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19f2b308ea9b40fb976ad08a4d73f48d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb46911a5d866c1a7ebca48cec43de80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7bcab0fb8026ed21e72410a5bd1b8613 |
| publicationDate |
2019-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2019112288-A |
| titleOfInvention |
Silicon carbide member and member for semiconductor manufacturing apparatus |
| abstract |
An SiC member suitable as a member for a semiconductor manufacturing apparatus such as a focus ring and a dummy wafer, which is excellent in corrosion resistance to plasma, low in light transmittance, high in temperature control and recognition by laser light. SOLUTION: A composition ratio C / Si which is a content of C element to a content of Si element is larger than 1 and a peak intensity in the vicinity of 794 cm- 1 is P1 in Raman spectroscopy and a peak intensity in the vicinity of 1361 cm- 1 is P2. When the ratio of P2 / P1 is 0.02 or less. [Selected figure] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021060516-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021054667-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022202469-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7077288-B2 |
| priorityDate |
2017-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |