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filingDate 1998-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2000-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2000109366-A
titleOfInvention Light-impermeable high-purity silicon carbide material, light-shielding material for semiconductor processing device, and semiconductor processing device
abstract (57) Abstract: Provided is a silicon carbide material having high purity and low light transmittance for light having a wavelength in the infrared and near-infrared regions. A silicon carbide material containing silicon carbide polycrystal as a main component or a silicon carbide material containing silicon carbide polycrystal and free carbon as main components is provided. The porosity of each silicon carbide material is 0. 1% or less, the metal elements contained in the silicon carbide material are each 200 ppb or less, the weight ratio of silicon to the total weight of the silicon carbide material is 69.00-69.90% by weight, and the wavelength 0.4- The light transmittance in the region of 25 μm is 0.05% or less per 0.5 mm thickness.
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Total number of triples: 28.