| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02634 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-049
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02447
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 |
| filingDate |
2019-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1032bf9d85e38ef1d3a2a00772db3168
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4de599581a70e59f2eac5f151cbacea2 |
| publicationDate |
2019-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2019104679-A |
| titleOfInvention |
Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device |
| abstract |
The present invention provides a silicon carbide epitaxial substrate capable of reducing the difference between the dopant density in the central region and the dopant density in the peripheral region. A silicon carbide single crystal substrate and a silicon carbide layer are provided, and a linear orientation flat 5 is provided on the silicon carbide single crystal substrate and the silicon carbide layer, and the silicon carbide layer is a silicon carbide single layer. The first end region with respect to the average value of the dopant density of the first end region and the dopant density of the central region 33 when the maximum diameter 111 of the second major surface 30 opposite to the surface in contact with the crystal substrate is 100 mm or more The first ratio of the absolute value of the difference between the dopant density of the central region 33 and the dopant density of the central region 33 is 40% or less, relative to the average value of the dopant density of the second end region 32 and the dopant density of the central region 33, The silicon carbide epitaxial substrate 100, wherein the second ratio of the absolute value of the difference between the dopant density of the second end region 32 and the dopant density of the central region is 40% or less. [Selected figure] Figure 1 |
| priorityDate |
2015-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |