http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014116331-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5c6a9fd6219b32cd3893a49979951bf4
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683
filingDate 2012-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83e2d4d6666d780b2aa54dd7bd709d10
publicationDate 2014-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2014116331-A
titleOfInvention Crystal growth apparatus, crystal growth method and susceptor
abstract A growth layer is uniformly grown on a substrate placed on a susceptor. In a susceptor 10, a lower plate 11 is used as a portion corresponding to a conventional susceptor 90. In order to fix the substrate 50, the lower plate 11 and the upper plate 12 are used separately. Since the thermal conductivity of the upper plate 12 is set lower than that of the lower plate 11 and the substrate 50, the heat conduction efficiency to the upper plate 12 is further lower than the heat conduction efficiency to the substrate 50. The surface temperature can be lowered. Further, the temperature of the inner surface of the opening 121 facing the side surface of the substrate 50 is lower than the temperature of the inner surface of the recess 91 in the conventional susceptor 90. [Selection] Figure 2
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019104679-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2017043165-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020188148-A
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priorityDate 2011-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007176777-A
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Total number of triples: 29.