http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019041109-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-1403 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73204 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32225 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 |
| filingDate | 2018-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07377e537887070a577fc2069b9ba2ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_582ed222210aa4b660c2b59567954280 |
| publicationDate | 2019-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2019041109-A |
| titleOfInvention | Semiconductor element |
| abstract | The present invention provides a flip-chip type ultraviolet device with improved operating voltage and improved light output. A semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and disposed on the semiconductor structure The first conductive layer, the first electrode disposed on the first conductive type semiconductor layer through the first hole of the first insulating layer, and the second conductive type semiconductor layer through the second hole of the first insulating layer The second cover electrode includes a second electrode disposed on the first electrode, a first cover electrode disposed on the first electrode, and a second cover electrode 162 disposed on the second electrode. The second cover electrode includes a plurality of pad portions 162a. -1, 162a-2, 162a-3 and connecting portions 162a-1, 162a-2 for connecting a plurality of pad portions, and the connecting portion has the smallest width at an intermediate point between adjacent pad portions, and the second cover The area ratio of the electrode to the first cover electrode is 1: 1.1 to 1: 1. It discloses a semiconductor device is. [Selection] Figure 3d |
| priorityDate | 2017-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.