| abstract |
To achieve both a metal layer selection ratio and a mask selection ratio. A plasma processing apparatus includes a multilayer film including at least an oxide layer, a conductive layer disposed below the top surface of the oxide layer in the stacking direction, and a mask layer disposed on the top surface of the oxide layer. A processing gas containing at least a fluorocarbon-based gas or a hydrofluorocarbon-based gas, oxygen, nitrogen, and CO is supplied into the disposed processing container, and plasma is generated in the processing container to which the processing gas is supplied. Then, the multilayer film is etched. [Selection] Figure 6 |