| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdf3b6ced3d7710ec0bc0addb67a1cc9 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-47573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2018-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8551bea47fc9174dda7eda3733a4d023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e07a13cd04b3ca1b6c86d15640302b17
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79ea2ef5bf02f7d8d5cfd830fbe0b4a2 |
| publicationDate |
2019-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2019033272-A |
| titleOfInvention |
Method for manufacturing semiconductor device |
| abstract |
A semiconductor device with high reliability, low leakage current between a source and a drain, and low contact resistance is provided. A first insulating film and a second insulating film provided in contact with an oxide semiconductor film are stacked over an electrode film of a transistor formed using an oxide semiconductor film. An etching mask 128 is formed over the second insulating film, and an opening 130 that exposes the electrode film is formed by etching the first insulating film and the second insulating film in a portion overlapping with the opening of the etching mask. . The openings of the first insulating film and the second insulating film are exposed to argon plasma, the etching mask is removed, and a conductive film is formed in the openings of the first insulating film and the second insulating film. The first insulating film is an insulating film from which part of oxygen is released by heating. The second insulating film is less etched than the first insulating film and has lower gas permeability than the first insulating film. . Alternatively, reverse sputtering may be performed. [Selection] Figure 4 |
| priorityDate |
2011-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |