| abstract |
Methods and apparatus for processing a substrate are provided. In some embodiments, the method of processing a substrate comprises the steps of: (a) supplying a processing gas including a polymer forming gas and an etching gas between a first electrode and a second electrode in a processing volume. A step in which the first electrode is opposed to the second electrode, and (b) applying a first voltage waveform from the first RF power source to the second electrode to form plasma from the processing gas. And having a first ion energy for depositing the polymer layer directly on the dielectric layer of the substrate, and (c) adjusting the first voltage waveform to a second voltage waveform. Increasing the ion energy of the plasma from the first ion energy to the second ion energy, wherein the second ion energy plasma stops depositing the polymer layer and the polymer layer and dielectric And initiating a etch layer. |