http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018205400-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f1fa5d9dad1e25d03221763e0238499d http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44ff3005508304394801e265e503b811 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2006 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2017-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c8f8441a9413075acc778b66f093976 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8c6c7f8a7809e51870ecadb4107ba9c |
| publicationDate | 2018-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2018205400-A |
| titleOfInvention | Mask blank, transfer mask manufacturing method, and semiconductor device manufacturing method |
| abstract | A method of manufacturing a mask blank and a transfer mask, which can suppress the occurrence of surface roughness of a light-transmitting substrate when EB defect correction is performed, and can suppress the occurrence of spontaneous etching in a pattern of a light shielding film. A method for manufacturing a semiconductor device is provided. A light-shielding film for forming a transfer pattern on a translucent substrate, wherein the light-shielding film is made of a material composed of silicon and nitrogen, or one or more elements selected from a semi-metallic element and a non-metallic element. Further, the number of Si3N4 bonds in the inner region excluding the region near the interface between the light-shielding film and the light-transmitting substrate and the surface layer region on the opposite side of the light-shielding film is determined by the Si3N4 bond. , The ratio divided by the total number of SiaNb bonds (where b / [a + b] <4/7) and Si—Si bonds is 0.04 or less, and the number of SiaNb bonds in the inner region of the light-shielding film is The ratio divided by the total number of Si3N4 bonds, SiaNb bonds, and Si-Si bonds is 0.1 or more. [Selection] Figure 1 |
| priorityDate | 2017-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.