| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3341 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32587
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67167 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2018-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d234124be7e513dda348c4f8808368e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1cbc915edc506f8d44a0bc81ddceaaf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11897270b1340382d45cb72366fe97c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0060c77f6bc3033ea8ce667d9b08a80 |
| publicationDate |
2018-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2018201031-A |
| titleOfInvention |
Process chamber for etching low K and other dielectric films |
| abstract |
A method and processing chamber for etching low-k dielectric films and other dielectric films are provided. The method includes modifying a portion of the low-k dielectric layer by plasma treatment. The modified portion of the low k dielectric layer is selectively etched over the mask layer and the unmodified portion of the low k dielectric layer. It has a plurality of chamber regions for alternately generating different plasmas. A first charge coupled plasma source is provided for generating ion flux to the workpiece in one mode of operation, while a secondary plasma source is reactive species bundle without significant ion flux on the workpiece in another mode of operation. Is provided to provide The controller operates to cycle through the operating modes repeatedly over time to remove the desired cumulative amount of dielectric material. [Selection] Figure 2 |
| priorityDate |
2011-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |