http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018186119-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_10764c702d0d4b02a17856a8e212a0bd |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J175-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J4-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-53 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J11-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-301 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J133-00 |
| filingDate | 2017-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e6901d2f05fdb988c32857d9233b8d3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3d2e16a15abadc9a26cc9f162520b1b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e056608f575cfb3da5c4bdc04f381b5 |
| publicationDate | 2018-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2018186119-A |
| titleOfInvention | Stealth dicing adhesive tape and semiconductor chip manufacturing method using the same |
| abstract | 【Task】 In stealth dicing, in which a modified layer is formed inside a semiconductor wafer by irradiating a laser beam, the semiconductor wafer can be easily divided when the adhesive tape for stealth dicing is expanded. Supply adhesive tape for stealth dicing that can be easily peeled off. [Solution] According to the present invention, an adhesive tape for stealth dicing having an ultraviolet curable pressure-sensitive adhesive layer on a substrate film, the ultraviolet curable pressure-sensitive adhesive layer having a specific composition, and an ultraviolet curable pressure-sensitive adhesive before ultraviolet irradiation. Provided is an adhesive tape for stealth dicing that is excellent in the releasability and releasability of a semiconductor wafer by defining the storage layer elastic modulus at 23 ° C. and the tensile modulus at 23 ° C. of the base film. [Selection figure] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112521878-A |
| priorityDate | 2017-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 128.