| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e94e708dadc7e06262765b676d455e8b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-04 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02389
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02634
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7806
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0201 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate |
2017-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3f7e1b80933794132c19d3c95a13b75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3c32af7c19f83b0072d0263b0695f88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_375d4240071c39bef8c901d5a7bd4204 |
| publicationDate |
2018-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2018170491-A |
| titleOfInvention |
Thin film and substrate removal III-nitride based devices and methods |
| abstract |
A nitride light-emitting device with low absorption loss is provided. A method of thinning a bulk aluminum nitride substrate includes providing a bulk aluminum nitride (AlN) substrate having at least one epitaxially grown group III-nitride layer on a first surface of the substrate; Applying a slurry having a high pH to the second surface of the substrate opposite the substrate and chemically mechanically polishing the second surface of the substrate using the slurry to remove at least a portion of the substrate And producing a thin layer having a thickness of less than 50 microns and bonding the epitaxial layer to the non-native substrate. The device has at least one active zone in the layer of epitaxial III-nitride material, and the epitaxial III-nitride layer has a defect density of 10 8 / cm 2 or less. [Selection figure] None |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020054764-A1 |
| priorityDate |
2016-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |