| abstract |
The present invention realizes a high selectivity and a high etching rate when etching a laminated film using an amorphous carbon film containing boron, thereby enabling consistent processing and simplifying a mask film forming process. Thus, a high-throughput process including pre- and post-processes is realized, and a plasma processing method and a processing apparatus therefor having shape controllability in vertical processing are provided. The present invention relates to a plasma processing method for forming a mask by plasma etching a laminated film having an amorphous carbon film containing boron, in which an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrafluoride gas are formed. The amorphous carbon film containing boron is plasma-etched using a mixed gas of oxygen or a mixed gas of oxygen gas, fluorine-containing gas, halogen gas, and silicon tetrachloride gas. [Selection] Figure 2 |