| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45561
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate |
2015-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_929e876d3323bbc19bd50b8c58a31c6f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2929a08e2c6601e6b90d48134d6a44a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8130a41277b689973e42a2031d3b828e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e79784ebffb488222d7a46c9562a9db6 |
| publicationDate |
2018-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2018090834-A |
| titleOfInvention |
Semiconductor device manufacturing method, substrate processing apparatus, and program |
| abstract |
Provided is a technique capable of improving a film formation rate and forming a film having high dry etching resistance. A step of supplying a halogen-based source gas containing a metal element to a substrate and a step of supplying a reaction gas containing a nitrogen element and reacting with the metal element are time-divided into the substrate. Performing a predetermined number of times, forming a metal nitride layer, supplying a substrate with an organic source gas containing a metal element and a carbon element, and supplying a reaction gas to the substrate. The step of forming a metal carbonitride layer by performing a predetermined number of times in a time division manner includes the metal element, the carbon element and the nitrogen element on the substrate by performing the predetermined number of times in a time division manner. A step of forming a metal carbonitride film, wherein the metal carbonitride film is controlled by controlling a ratio between the number of times of performing the step of forming the metal nitride layer and the number of times of performing the step of forming the metal carbonitride layer. The carbon concentration contained in And 0%. [Selection] Figure 4 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20230131132-A |
| priorityDate |
2015-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |