http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018032781-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2016-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9b0ef9ebf762dfecff14ee164778689 |
| publicationDate | 2018-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2018032781-A |
| titleOfInvention | Etching solution and etching method |
| abstract | An etching solution having a high etching rate with respect to silicon even at a low temperature of about room temperature and capable of cleaning silicon in a short time when used as a cleaning solution for silicon, and a silicon etching method using the etching solution. To provide. An etching solution containing hydrofluoric acid and periodic acid, the concentration of hydrofluoric acid being 5% by mass or more, and the concentration of periodic acid being 0.5% by mass or more is made of silicon. Used for etching. The etching solution is preferably an acid other than hydrofluoric acid and periodic acid, and preferably contains an acid having a pKa in water measured at 25 ° C. of 3 or less. [Selection figure] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11479863-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2020054296-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7108042-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023189353-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020054296-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023013436-A1 |
| priorityDate | 2016-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 65.